Non Local Impact Ionization Effects in Semiconductor Devices
نویسندگان
چکیده
منابع مشابه
Evidence of non-local impact ionization in CNT and HgCdTe
Two aspects of the non-local nature of impact ionization, dead space and resonance, are investigated. The very small excess noise factor measured for mercury cadmium telluride photodiodes can only be explained if the hole to electron ionization coefficient ratio, k, is very small and the impact ionization dead space is also considered. A maximum value of k for HgCdTe is estimated in this paper....
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ژورنال
عنوان ژورنال: VLSI Design
سال: 1998
ISSN: 1065-514X,1563-5171
DOI: 10.1155/1998/72767